| 1. |
- Kakanakova-Georgieva, Anelia, 1970-, et al.
(författare)
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Mg-doped Al0.85Ga0.15N layers grown by hot-wall MOCVD with low resistivity at room temperature
- 2010
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Ingår i: PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS. - : John Wiley and Sons, Ltd. - 1862-6254 .- 1862-6270. ; 4:11, s. 311-313
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Tidskriftsartikel (refereegranskat)abstract
- We report on the hot-wall MOCVD growth of Mg-doped AlxGa1-xN layers with an Al content as high as x similar to 0.85. After subjecting the layers to post-growth in-situ annealing in nitrogen in the growth reactor, a room temperature resistivity of 7 k Omega cm was obtained indicating an enhanced p-type conductivity compared to published data for AlxGa1-xN layers with a lower Al content of x similar to 0.70 and a room temperature resistivity of about 10 k Omega cm. It is believed that the enhanced p-type conductivity is a result of reduced compensation by native defects through growth conditions enabled by the distinct hot-wall MOCVD system.
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| 2. |
- Adolfsson, Göran, 1981, et al.
(författare)
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Realization of spectrally engineered semiconductor Fabry-Perot lasers with narrow geometrical tolerances
- 2011
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 109:9, s. 093112-
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Tidskriftsartikel (refereegranskat)abstract
- Spectrally engineered semiconductor Fabry-Perot laser resonators are designed to enhance the optical feedback for selected longitudinal modes, which thereby require less gain for lasing. This is achieved by introducing refractive index perturbations along the length of the resonator. However,the physical realization of these resonators is a challenge because of very narrow tolerances; in particular the need for precise positioning of the end facets of the resonator in relation to the perturbations, and the excess propagation loss associated with the perturbations, has been a majorconcern. We report on a method to achieve high-quality end facet mirrors enabling precise positioning relative to the perturbations, the latter which are realized as lateral corrugations of the waveguide. Measurements show that the mirror quality is comparable to that of cleaved mirrorsand that the additional loss introduced by the perturbations adds
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| 3. |
- Fuchs, Christian, et al.
(författare)
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Spatio-temporal turn-on dynamics of grating relief VCSELs
- 2007
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Ingår i: IEEE Journal of Quantum Electronics. - 0018-9197 .- 1558-1713. ; 43:11-12, s. 1227-1234
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Tidskriftsartikel (refereegranskat)abstract
- Within a joint collaboration between modeling, technology and experiments, we investigate the polarization-resolved spatial emission and turn-on dynamics of oxide-confined vertical-cavity surface-emitting lasers with an integrated surface-relief grating. By applying a time-resolved imaging technique we demonstrate that the introduced high dichroism also maintains its influence dynamically. This leads to highly polarization-stable spatially fundamental Gaussian mode emission on 100-ps timescale. Finally, the achieved progress, but also the limits of this promising stabilization scheme are discussed.
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| 4. |
- Ou, Yiyu, et al.
(författare)
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Impedance characteristics and parasitic speed limitations of high speed 850 nm VCSELs
- 2009
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Ingår i: IEEE Photonics Technology Letters. - 1041-1135 .- 1941-0174. ; 21, s. 1840-
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Tidskriftsartikel (refereegranskat)abstract
- Abstract—The impedance characteristics of high-speed oxideconfined 850-nm vertical-cavity surface-emitting lasers have been studied with the aim of identifying the importance of device parasitics for the modulation bandwidth. Through equivalent circuit modeling, it is confirmed that device parasitics have a major impact on the bandwidth and the importance of each individual circuit element has been investigated. According to the extrapolation of the parameters derived from S11 measurements below 20 GHz towards higher frequencies and assuming that the mesa capacitance can be reduced by adding a few extra oxide layers without significantly affecting series resistance, our model predicts that the 3-dB parasitic frequency can be increased from 22 to above 30 GHz. Accounting also for bandwidth limitations due to thermal effects, we expect an increase of the modulation bandwidth of several gigahertz which may enable direct current modulation at 40 Gb/s.
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| 5. |
- Baveja, P. P., et al.
(författare)
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Assessment of VCSEL thermal rollover mechanisms from measurements and empirical modeling
- 2011
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Ingår i: Optics Express. - 1094-4087 .- 1094-4087. ; 19:16, s. 15490-15505
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Tidskriftsartikel (refereegranskat)abstract
- We use an empirical model together with experimental measurements for studying mechanisms contributing to thermal rollover in vertical-cavity surface-emitting lasers (VCSELs). The model is based on extraction of the temperature dependence of threshold current, internal quantum efficiency, internal optical loss, series resistance and thermal impedance from measurements of output power, voltage and lasing wavelength as a function of bias current over an ambient temperature range of 15-100 degrees C. We apply the model to an oxide-confined, 850-nm VCSEL, fabricated with a 9-mu m inner-aperture diameter and optimized for highspeed operation, and show for this specific device that power dissipation due to linear power dissipation (sum total of optical absorption, carrier thermalization, carrier leakage and spontaneous carrier recombination) exceeds power dissipation across the series resistance (quadratic power dissipation) at any ambient temperature and bias current. We further show that the dominant contributors to self-heating for this particular VCSEL are quadratic power dissipation, internal optical loss, and carrier leakage. A rapid reduction of the internal quantum efficiency at high bias currents (resulting in high temperatures) is identified as being the major cause of thermal rollover. Our method is applicable to any VCSEL and is useful for identifying the mechanisms limiting the thermal performance of the device and to formulate design strategies to ameliorate them.
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| 6. |
- Gierl, Christian, et al.
(författare)
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Tuneable VCSEL aiming for the application in interconnects and short haul systems
- 2011
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9780819484963 ; 7959
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- Widely tunable vertical cavity surface emitting lasers (VCSEL) are of high interest for optical communications, gas spectroscopy and fiber-Bragg-grating measurements. In this paper we present tunable VCSEL operating at wavelength around 850 nm and 1550 nm with tuning ranges up to 20 nm and 76 nm respectively. The first versions of VCSEL operating at 1550 nm with 76 nm tuning range and an output power of 1.3mW were not designed for high speed modulation, but for applications where only stable continious tuning is essential (e.g. gas sensing). The next step was the design of non tunable VCSEL showing high speed modulation frequencies of 10 GHz with side mode supression ratios beyond 50 dB. The latest version of these devices show record output powers of 6.7mW at 20 °C and 3mW at 80 °C. The emphasis of our present and future work lies on the combination of both technologies. The tunable VCSEL operating in the 850 nm-region reaches a modulation bandwidth of 5.5GHz with an output power of 0.8mW.
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| 7. |
- Gustavsson, Johan, 1974, et al.
(författare)
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High-speed 850-nm VCSELs for 40 Gb/s transmission
- 2010
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- We have explored the possibility to extend the data transmission rate for standard 850-nm GaAs-based VCSELs beyond the 10 Gbit/s limit of today's commercially available directly-modulated devices. By sophisticated tailoring of the design for high-speed performance we demonstrate that 10 Gb/s is far from the upper limit. For example, the thermal conductivity of the bottom mirror is improved by the use of binary compounds, and the electrical parasitics are kept at a minimum by incorporating a large diameter double layered oxide aperture in the design. We also show that the intrinsic high speed performance is significantly improved by replacing the traditional GaAs QWs with strained InGaAs QWs in the active region. The best overall performance is achieved for a device with a 9 μm diameter oxide aperture, having in a threshold current of 0.6 mA, a maximum output power of 9 mW, a thermal resistance of 1.9 °C/mW, and a differential resistance of 80 Ω. The measured 3dB bandwidth exceeds 20 GHz, and we experimentally demonstrate that the device is capable of error-free transmission (BER
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| 8. |
- Haglund, Erik, 1985, et al.
(författare)
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GaAs High-Contrast Gratings with InGaP Sacrificial Layer for Multi-Wavelength VCSEL Arrays
- 2016
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Ingår i: Conference Digest - IEEE International Semiconductor Laser Conference. - 0899-9406. - 9784885523069 ; TuD2, s. Article n0 7765746-
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Konferensbidrag (refereegranskat)abstract
- We report on highly reflective suspended GaAs high-contrast gratings (HCGs) using an InGaP sacrificial layer. A high reflectivity approaching 100% was observed both in direct reflectivity measurement and by low threshold currents in fabricated multi-wavelength HCG-VCSEL arrays.
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| 9. |
- Healy, S. B., et al.
(författare)
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Active Region Design for High-Speed 850-nm VCSELs
- 2010
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Ingår i: IEEE Journal of Quantum Electronics. - 0018-9197 .- 1558-1713. ; 46:4, s. 506-512
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Tidskriftsartikel (refereegranskat)abstract
- Higher speed short-wavelength (850 nm) VCSELs are required for future high-capacity, short-reach data communication links. The modulation bandwidth of such devices is intrinsically limited by the differential gain of the quantum wells (QWs) used in the active region. We present gain calculations using an 8-band k.p Hamiltonian which show that the incorporation of 10% In in an InGaAs/AlGaAs QW structure can approximately double the differential gain compared to a GaAs/AlGaAs QW structure, with little additional improvement achieved by further increasing the In composition in the QW. This improvement is confirmed by extracting the differential gain value from measurements of the modulation response of VCSELs with optimized InGaAs/AlGaAs QW and conventional GaAs/AlGaAs QW active regions. Excellent agreement is obtained between the theoretically and experimentally determined values of the differential gain, confirming the benefits of strained InGaAs QW structures for high-speed 850-nm VCSEL applications.
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| 10. |
- Kögel, Benjamin, 1979, et al.
(författare)
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Integrated MEMS-tunable VCSELs for reconfigurable optical interconnects
- 2012
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9780819489197 ; 8276, s. Article Number: 82760Q-
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Konferensbidrag (refereegranskat)abstract
- A simple and low-cost technology for tunable vertical-cavity surface-emitting lasers (VCSELs) with curved movable micromirror is presented. The micro-electro-mechanical system (MEMS) is integrated with the active optical component (so-called half-VCSEL) by means of surface-micromachining, using a reflown photoresist droplet as sacrificial layer. The technology is demonstrated for electrically pumped, short-wavelength (850nm) tunable VCSEts. Fabricated devices with 10 mu m oxide aperture are singlemode with sidemode suppression >35 dB, tunable over 24 mit with output power up to 0.5 mW, and have a beam divergence angle
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